l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ.

(personal equipment, office equipment, domestic appliances, etc.). These RZC products are neither intended nor warranted.

The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20.

8205

8205B

8205C

82012

8203

82077AA

82078

82078-1

82078-3

82078-5

82078SL

82091AA

82093AA

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